This GitHub repository documents the 10-day workshop on FinFET Circuit Design and Characterization using ASAP7 PDK offered by VSD Corp. Pvt. Ltd. attended as part of cohort 28-nov 2025 to 7-dec 2025.
MCC Semiconductor has released the MCG062N15Y, a 150V N-channel MOSFET designed for power switching applications requiring compact form factors. The device incorporates Split Gate Trench (SGT) ...
Enhances performance and efficiency in switched-mode power supplies for industrial equipment with improved figure-of-merit (RDS(ON) x Qg). Toshiba Electronics Europe has launched the TPH2R70AR5, a new ...
As CMOS technology approaches sub-1 nm nodes, conventional Dennard scaling has essentially ended, and further device scaling must rely on innovations across multiple domains: Patterning, Channel ...
P-channel power MOSFETs are now part of Infineon Technologies’ mix of radiation-tolerant MOSFETs for low-Earth-orbit (LEO) systems. Included in the company’s expanding portfolio of devices for ...
SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced the release of its 8th-generation 1) MXT LV MOSFET (Metal Oxide Semiconductor ...
The latest addition from Infineon brings a compelling balance of performance, cost-effectiveness, and availability to the NewSpace market. In an interview with Power Electronics News, Jutta ...
USTC team reports 1.4 kV/2.0 mΩ·cm 2 regrowth-free vertical GaN trench MIS-FET featuring high inversion channel mobility of 205 cm 2 /V·s with monocrystal-like AlN nitridation interfacial-layer To ...
A new technical paper titled “First Demonstration of High-Performance and Extremely Stable W-Doped In 2 O 3 Gate-All-Around (GAA) Nanosheet FET” was published by researchers at Georgia Institute of ...
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